| 摘要 |
The invention relates to a process for preparing materials in chalcogenide systems AsS-EuSand AsS-ErSwith a view to using them as targets for thin layer deposition using the PLD method and for producing, in the electronics industry, devices emitting in the visible or infrared range , as well as for converting energy from the IR range into the VIS range. According to the invention, the process consists in preparing Asby co-precipitation in the Euand Ersynthesis stage, at the temperature of 80°C, washing the resulting precipitate with deionized water up to a neutral pH value, drying the same in an oven, at 100°C, for 24 h, and, after obtaining the precipitate powders, pouring them into quartz vials having an internal diameter of 14 mm which are introduced into a pure spectral graphite susceptor boat of in inductive heating installation for a heat treatment of the powders at a temperature of 491°C, for 192 min, in a 99.999%-pure Ar-controlled atmosphere, at a pressure of 1.1 atm. |
