发明名称 METHOD AND UNIT FOR MELTING SILICON AND SILICON SINGLE CRYSTAL MANUFACTURING APPARATUS INCLUDING UNIT
摘要 <p>PROBLEM TO BE SOLVED: To completely, efficiently melt a silicon raw material by further reducing an occurrence frequency of high frequency noise.SOLUTION: The method for melting silicon comprises: pre-heating a silicon raw material by supplying AC to an induction coil in the state of surrounding the outer periphery of a melting vessel storing the silicon raw material by a cylindrical pre-heating mechanism; and induction-heating the pre-heated silicon raw material by supplying AC to the induction coil in the state of removing the preheating mechanism from the periphery of the silicon raw material after the silicon raw material reaches a predetermined temperature by the pre-heating. A frequency of AC supplied to the induction coil is set to 5 kHz or more and less than 100 kHz, preferably, 10 kHz or more and 80 kHz, and the predetermined temperature is set to more than 800°C and less than 1412°C, preferably, 1000°C or more and 1200°C or less.</p>
申请公布号 JP2015137210(A) 申请公布日期 2015.07.30
申请号 JP20140010227 申请日期 2014.01.23
申请人 SUMCO CORP 发明人 SUGIMURA WATARU;HAYASHI MITSUAKI;FUJIWARA TOSHIYUKI
分类号 C30B29/06;C30B15/02 主分类号 C30B29/06
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