| 发明名称 |
METHOD FOR MANUFACTURING ROD-TYPE LIGHT EMITTING DEVICE AND ROD-TYPE LIGHT EMITTING DEVICE |
| 摘要 |
There is provided a method for manufacturing a rod-type light emitting device, which includes: forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer. |
| 申请公布号 |
US2015214429(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201514607723 |
申请日期 |
2015.01.28 |
| 申请人 |
TOKYO ELECTRON LIMITED ;NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY |
发明人 |
IIZUKA Yoji;KATO Yoshihiro;NEISHI Koji;MIURA Hitoshi;KIKUTA Shinya;KASHIWAGI Yusaku;AMANO Hiroshi;HONDA Yoshio |
| 分类号 |
H01L33/20;H01L33/06;H01L33/32;H01L33/00 |
主分类号 |
H01L33/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a rod-type light emitting device, comprising:
forming a rod having lateral surfaces and an upper surface on a GaN layer of a first conductivity-type, the rod being made of a GaN of the first conductivity-type; selectively growing a high-resistivity layer on the upper surface of the rod; forming a multi-quantum well layer to cover the lateral surfaces and the upper surface of the rod and the high-resistivity layer; and forming a GaN layer of a second conductivity-type to cover the multi-quantum well layer. |
| 地址 |
TOKYO JP |
