| 发明名称 |
DIFFUSION RESISTANT ELECTROSTATIC CLAMP |
| 摘要 |
In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD). |
| 申请公布号 |
US2015214087(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201414280245 |
申请日期 |
2014.05.16 |
| 申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Stone Dale K.;Cooke Richard;Lin I-Kuan;Blake Julian G.;Stone Lyudmila |
| 分类号 |
H01L21/683;C23C16/50;C23C16/455 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating an electrostatic clamp, comprising:
forming an insulator body; forming an electrode on the insulator body; and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ALD). |
| 地址 |
Gloucester MA US |
