| 发明名称 |
Wafer Processing Method and Apparatus |
| 摘要 |
An apparatus for and a method of bonding a first substrate and a second substrate are provided. In an embodiment a first wafer chuck has a first curved surface and a second wafer chuck has a second curved surface. A first wafer is placed on the first wafer chuck and a second wafer is placed on a second wafer chuck, such that both the first wafer and the second wafer are pre-warped prior to bonding. Once the first wafer and the second wafer have been pre-warped, the first wafer and the second wafer are bonded together. |
| 申请公布号 |
US2015214082(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201414163460 |
申请日期 |
2014.01.24 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Chih-Hui;Tsao Chun-Han;Chen Sheng-Chau;Tu Yeur-Luen;Tsai Chia-Shiung;Chen Xiaomeng |
| 分类号 |
H01L21/67;H01L21/683;H01L21/762;H01L21/18;H01L21/66 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of bonding wafers, the method comprising:
warping a first wafer prior to bonding to form a warped first wafer; warping a second wafer prior to bonding to form a warped second wafer; and bonding the first warped wafer to the second warped wafer. |
| 地址 |
Hsin-Chu TW |
