| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device by preventing generation of 1/f noise in a peripheral transistor when an occupied area of photo diodes included in a plurality of pixels, respectively, which compose an image pickup element is increased.SOLUTION: In a semiconductor device, a gate electrode G1 of an amplification transistor AMI is composed of a gate electrode part GP on an active region AT1 and a wide part GW which covers a boundary between the active region AT1 and an element isolation region STI and an active region AT1 near the boundary and has a gate length longer than that of the gate electrode part GP. |
