| 发明名称 |
INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF |
| 摘要 |
An integrated circuit includes a semiconductor substrate, and at least two transistors connected in series on the semiconductor substrate, wherein each transistor shares a source electrode or a drain electrode with an adjacent transistor. The integrated circuit also includes a hermetic cavity disposed on the source electrode and the drain electrode, between gate electrodes of adjacent transistors. The source electrode disposed at a first end portion of the series of transistors is in direct contact with a source interconnect, and the drain electrode disposed at a second end portion of the series of transistors is in direct contact with a drain interconnect. |
| 申请公布号 |
US2015214296(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201514597126 |
申请日期 |
2015.01.14 |
| 申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
HUANG Herb He;DROWLEY Clifford Ian |
| 分类号 |
H01L29/06;H01L21/84;H01L29/66;H01L27/12 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit comprising:
a semiconductor substrate; at least two transistors connected in series on the semiconductor substrate, wherein each transistor shares a source electrode or a drain electrode with an adjacent transistor; a hermetic cavity disposed on the source electrode and the drain electrode, between gate electrodes of adjacent transistors; wherein the source electrode disposed at a first end portion of the series of transistors is in direct contact with a source interconnect, and the drain electrode disposed at a second end portion of the series of transistors is in direct contact with a drain interconnect. |
| 地址 |
Shanghai CN |
