| 发明名称 |
CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A capacitor structure includes a substrate with a plurality of dielectric layers sequentially formed thereon, a trench formed in the dielectric layers, wherein the trench is composed of at least two interconnected dual damascene recesses, each dual damascene recess formed in one dielectric layer; and a capacitor multilayer disposed on the sidewall of the trench. |
| 申请公布号 |
US2015214293(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201414165535 |
申请日期 |
2014.01.27 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Liao Duan Quan;Chen Yikun;TEY CHING HWA;Zhu Xiao Zhong |
| 分类号 |
H01L49/02;H01L27/108 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A capacitor structure, comprising:
a substrate with a plurality of dielectric layers sequentially formed thereon; a trench formed in said dielectric layers, wherein said trench is composed of at least two interconnected dual damascene recesses, each dual damascene recess formed in one said dielectric layer; and a capacitor multilayer disposed on the sidewall of said trench and also between the dielectric lavers and the dual damascene recesses. |
| 地址 |
Hsin-Chu City TW |
