Metal Shield Structure and Methods for BSI Image Sensors

摘要

A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein an interconnect layer is formed over the first side of the semiconductor substrate, a backside illumination film formed over a second side of the semiconductor substrate, a metal shielding layer formed over the backside illumination film and a via embedded in the backside illumination film and coupled between the metal shielding layer and the semiconductor substrate.

主权项

1. A method comprising:
forming a plurality of photo active regions adjacent to a first side of a substrate; applying a thinning process to a second side of the substrate; forming a backside illumination film on the second side of the substrate; patterning the backside illumination film to form an opening in the backside illumination film; depositing a metal material to fill the opening to form a first conductive via, and form a metal layer over the backside illumination film; and patterning the metal layer to form a metal shielding layer, wherein the metal shielding layer is connected to the substrate through the first conductive via.