| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of properly reading data even when the resistance value of a reference cell deviates from an intermediate resistance value.SOLUTION: A semiconductor storage device includes: a memory cell; a reference cell; a first current source that flows a first current to the memory cell; a second current source that is variable in the amount of current and flows a second current to the reference cell; a sense amplifier that compares a voltage according to an inter-terminal voltage of the memory cell and a voltage according to an inter-terminal voltage of the reference cell; and a current amount setting circuit that determines the amount of current of the second current source. The amount of current of the second current source is determined by the current amount setting circuit so that the inter-terminal voltage of the reference cell is set between the inter-terminal voltage of the memory cell having a data value of 0 and the inter-terminal voltage of the memory cell having a data value of 1. |
