| 发明名称 |
METHOD OF DOPING 2-DIMENSIONAL SEMICONDUCTOR AND SWITCHING DEVICE |
| 摘要 |
Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions into the semiconductor layer, forming a doped layer formed of a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer, and doping the doped layer by diffusing the ions of the semiconductor layer into the doped layer through annealing the substrate. |
| 申请公布号 |
US2015214482(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201414340108 |
申请日期 |
2014.07.24 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK Jin-hong;PARK Hyung-youl;SHIM Jae-woo;LEE Jae-ho |
| 分类号 |
H01L51/00;H01L51/10;H01L51/05 |
主分类号 |
H01L51/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of doping a 2-dimensional semiconductor, the method comprising:
forming a semiconductor layer on a substrate; implanting ions into the semiconductor layer; forming a doped layer including a 2-dimensional semiconductor layer or an organic semiconductor layer on the semiconductor layer; and doping the doped layer by diffusing the implanted ions of the semiconductor layer into the doped layer through annealing of the semiconductor layer. |
| 地址 |
Suwon-Si KR |
