| 发明名称 |
PHOTOTRANSISTOR AND SEMICONDUCTOR DEVICE |
| 摘要 |
A phototransistor includes a first emitter region, a first base region having at least a portion exposed to a light-receiving side, and a first collector region in this order from the light-receiving side in a depth direction. The first collector region includes a second collector region and a third collector region that is in contact with a downstream side of the second collector region in the depth direction and has a resistance lower than that of the second collector region. The phototransistor further includes a first region that is spaced away from the first base region at an outer side of the first base region on a light-receiving side surface thereof, the first region having a conductivity type opposite to that of the first collector region. |
| 申请公布号 |
US2015214413(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201514604825 |
申请日期 |
2015.01.26 |
| 申请人 |
NEGORO Takaaki;MIKI Yoshihiko;SAKURANO Katsuyuki;TSUDA Keiji;WATANABE Hirofumi |
发明人 |
NEGORO Takaaki;MIKI Yoshihiko;SAKURANO Katsuyuki;TSUDA Keiji;WATANABE Hirofumi |
| 分类号 |
H01L31/11;H01L27/144;H01L27/082 |
主分类号 |
H01L31/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A phototransistor comprising a first emitter region, a first base region having at least a portion exposed to a light-receiving side, and a first collector region in this order from the light-receiving side in a depth direction, wherein
the first collector region includes a second collector region and a third collector region that is in contact with a downstream side of the second collector region in the depth direction and has a resistance lower than that of the second collector region, and the phototransistor further comprises a first region that is spaced away from the first base region at an outer side of the first base region on a light-receiving side surface thereof, the first region having a conductivity type opposite to that of the first collector region. |
| 地址 |
Osaka JP |
