GRAPHENE FOR SEMICONDUCTOR CO-DOPING BORON AND NITROGEN AT THE SAME TIME AND PREPARATION METHOD THEREOF

摘要

Disclosed are boron/nitrogen co-doped graphene for semiconductor applications and a method for producing the same. The boron/nitrogen co-doping allows the use of the doped graphene in a wider variety of applications, including semiconductors. In contrast, graphene structures produced by conventional methods have good physical, chemical, and electrical stability but cannot be used in semiconductor applications due to the absence of band gaps therein. In addition, the boron/nitrogen co-doping makes the doped graphene highly dispersible in organic solvents.

主权项

1. Boron/nitrogen co-doped graphene for semiconductor applications wherein the doping is performed after an alkali metal in Group 1 of the Periodic Table or an alkaline earth metal in Group 2 of the Periodic Table is chemically bonded to a carbon precursor.