发明名称 THIN FILM TRANSISTOR FOR A DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE
摘要 <p>Disclosed are a thin film transistor for a display substrate, a display substrate and a method for manufacturing the substrate. The thin film transistor for a display substrate according to the present invention includes a gate electrode, an active pattern, a source electrode and a drain electrode. The gate electrode is arranged on a substrate and includes a first conductive pattern and a plurality of second conductive patterns. The active pattern overlaps with the gate electrode and includes a crystallized semiconductor. The source electrode and the drain electrode are connected to the active pattern electrically, and are separated from each other along a first direction parallel to the upper surface of the substrate. The second conductive patterns overlap with the first conductive pattern, and are separated from each other along the first direction.</p>
申请公布号 KR20150087617(A) 申请公布日期 2015.07.30
申请号 KR20140007792 申请日期 2014.01.22
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 MOON, SANG HO;KIM, SUNG HO
分类号 H01L29/786;H01L27/32;H01L29/423;H01L51/50 主分类号 H01L29/786
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