发明名称 |
THIN FILM TRANSISTOR FOR A DISPLAY SUBSTRATE, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE |
摘要 |
<p>Disclosed are a thin film transistor for a display substrate, a display substrate and a method for manufacturing the substrate. The thin film transistor for a display substrate according to the present invention includes a gate electrode, an active pattern, a source electrode and a drain electrode. The gate electrode is arranged on a substrate and includes a first conductive pattern and a plurality of second conductive patterns. The active pattern overlaps with the gate electrode and includes a crystallized semiconductor. The source electrode and the drain electrode are connected to the active pattern electrically, and are separated from each other along a first direction parallel to the upper surface of the substrate. The second conductive patterns overlap with the first conductive pattern, and are separated from each other along the first direction.</p> |
申请公布号 |
KR20150087617(A) |
申请公布日期 |
2015.07.30 |
申请号 |
KR20140007792 |
申请日期 |
2014.01.22 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
MOON, SANG HO;KIM, SUNG HO |
分类号 |
H01L29/786;H01L27/32;H01L29/423;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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