发明名称 NANO FIELD-EFFECT VACUUM TUBE
摘要 A method is provided for fabricating a nano field-effect vacuum tube. The method includes providing a substrate having an insulating layer and a sacrificial layer; and forming a sacrificial line, a source sacrificial layer and a drain sacrificial layer. The method also includes forming a trench in the insulating layer; and forming a dielectric layer on the surface of the sacrificial line. Further, the method includes forming a metal layer on the dielectric layer to fill up the trench, cover the sacrificial line and expose the source sacrificial layer and the drain sacrificial layer; and removing the source sacrificial layer and the drain sacrificial layer. Further, the method also includes removing the sacrificial line to form a through channel; forming an isolation layer on the metal layer; and forming a source region and a drain region on the insulating layer at both ends of the metal layer.
申请公布号 US2015214349(A1) 申请公布日期 2015.07.30
申请号 US201514684044 申请日期 2015.04.10
申请人 Semiconductor Manufacturing International (Shanghai) Corporation 发明人 XIAO DEYUAN
分类号 H01L29/775;H01L29/10;H01L29/06 主分类号 H01L29/775
代理机构 代理人
主权项
地址 Shanghai CN