发明名称 |
SEMICONDUCTOR DEVICE AND FORMATION THEREOF |
摘要 |
A semiconductor device and methods of formation are provided. A semiconductor device includes a dielectric film over a dielectric layer. The dielectric film includes a crystalline structure having a substantially uniform composition of zirconium, nitrogen and oxygen. The dielectric film is formed through in situ nitrogen plasma doping of a zirconium layer. The dielectric film functions as a gate dielectric. The dielectric film has a high dielectric constant between about 28-29 and has a low leakage current density of about 4.79×10−5 A/cm2. The substantially uniform distribution of nitrogen throughout the zirconium oxide of the dielectric film increases the k value of the dielectric film by between about 15% to about 17% as compared to a dielectric film that has a non-uniform distribution of nitrogen through a zirconium oxide layer. |
申请公布号 |
US2015214321(A1) |
申请公布日期 |
2015.07.30 |
申请号 |
US201414166996 |
申请日期 |
2014.01.29 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Chi Liang-Chen;Tsai Chia-Ming;Wang Chin-Kun;Huang Jhih-Jie;Chen Miin-Jang |
分类号 |
H01L29/51;H01L21/28;H01L21/02 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a dielectric layer comprising oxide; and a dielectric film over the dielectric layer, the dielectric film comprising a crystalline structure comprising a substantially uniform composition of zirconium, nitrogen and oxygen. |
地址 |
Hsin-Chu TW |