Semiconductor Device and Method of Manufacture

摘要

A method for forming a semiconductor device includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric layer having a predetermined thickness is then formed. The dielectric layer has a first portion overlying the capacitor bottom plate and a second portion overlying the metal interconnect feature. A thickness of the first portion of the dielectric layer is adjusted by either reducing the thickness or depositing additional dielectric material. A capacitor top plate is formed over the first portion of the dielectric layer.

主权项

1. A method for forming a metal-insulator-metal (MIM) capacitor, comprising:
forming a capacitor bottom plate and a metal interconnect feature on a substrate, both the capacitor bottom plate and the metal interconnect feature being located in a single plane that is parallel with a major surface of the substrate; forming a dielectric layer to a predetermined thickness, the dielectric layer having a first portion overlying the capacitor bottom plate and having a second portion overlying the metal interconnect feature; reducing a thickness of the first portion of the dielectric layer without reducing a thickness of the second portion; and forming a capacitor top plate directly over and immediately adjacent the first portion of the dielectric layer, wherein a region between the capacitor top plate and the capacitor bottom plate is filled by only the dielectric layer.