发明名称 |
NONVOLATILE MEMORY DEVICES AND METHODS FORMING THE SAME |
摘要 |
Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other. |
申请公布号 |
US2015214243(A1) |
申请公布日期 |
2015.07.30 |
申请号 |
US201514682111 |
申请日期 |
2015.04.09 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
LEE CHANGHYUN;SON BYOUNGKEUN |
分类号 |
H01L27/115;H01L23/50;G11C16/04 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |