Method For Self-Aligned Double Patterning Without Atomic Layer Deposition

摘要

A method for self-aligned double patterning without needing atomic layer deposition techniques is disclosed. Techniques include using a staircase etch technique to preferentially shrink one material without shrinking an underlying material, followed by a resist-based chemical polishing and planarization technique that yields a narrowed and protruding feature (single-layer thickness) that is sufficiently physically supported, and that can be transferred to one or more underlying layers. After removing a resist coating, the result is a pattern that has been doubled without using ALD techniques. Such techniques improve efficiencies over conventional techniques for self-aligned double patterning.

主权项

1. A method for patterning a substrate, the method comprising:
receiving a substrate having a patterned layer positioned on an underlying layer, the patterned layer comprising at least two layers of differing composition including an first component layer positioned on a second component layer; executing an isotropic etch operation using chemistry that selectively etches the first component layer as compared to the second component layer such that the first component layer is at least horizontally slimmed relative to the second component layer; depositing a planarizing film on the substrate such that the planarizing film yields a first planar surface on an upper portion of the substrate, the planarizing film including a solubility-changeable material; depositing a solubility-changing agent on the first planar surface of the planarizing film and activating the solubility-changing agent such that the solubility-changing agent changes a solubility of a top portion of the planarizing film, the top portion of the planarizing film having a thickness extending vertically from the first planar surface of the planarizing film to a predetermined depth within the planarizing film; removing the top portion of the planarizing film resulting in a top surface of the first component layer being uncovered; executing an anisotropic etching operation that etches through the first component layer and that etches through uncovered portions of the second component layer using the planarizing film as an etch mask; and removing the planarizing film such that a second pattern defined by the second component layer is uncovered.