| 发明名称 |
DEVICE MEMBER INICLUDING CAVITY AND METHOD OF PRODUCING THE DEVICE MEMBER INCLUDING CAVITY |
| 摘要 |
[Problem];The enclosing layer is not invaded in the gap, and the gap might not be buried, and the cavity which has the predetermined shape to be aimed can be formed by an easy step.;[Resolution Approach];In the invention, comprising;
the base member including the semiconductor 12, the interlayer 14, which is formed on the base member 12 and has the nonconductivity,the upper layer 16, which is formed on the interlayer 14 and includes the semiconductor,the opening portion 18 formed to the upper layer 16, the gas-permeable sealing layer 20, which is formed to seal the opening portion 18, wherein the cavity 22 is a cavity which is formed by removing the interlayer 14 with an etching gas that is penetrated through the sealing layer 20. |
| 申请公布号 |
US2015211949(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201314430321 |
申请日期 |
2013.06.18 |
| 申请人 |
THE UNIVERSITY OF TOKYO ;KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO |
发明人 |
Fujita Hiroyuki;Toshiyoshi Hiroshi;Mitsuya Hiroyuki |
| 分类号 |
G01L9/00;B81C1/00 |
主分类号 |
G01L9/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device member including a cavity, comprising:
a base member including the semiconductor; an interlayer, which is formed on the base member and has the nonconductivity; an upper layer, which is formed on the interlayer and includes the semiconductor; an opening portion formed to the upper layer; and a gas-permeable sealing layer, which is formed to seal the opening portion formed to the upper layer; wherein the cavity is a cavity which is formed by removing the interlayer with an etching gas that is penetrated through the sealing layer. |
| 地址 |
Tokyo JP |
