| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element capable of reducing a switching current, and to provide a spatial light modulator using the magnetoresistance effect element.SOLUTION: A magnetoresistance effect element 120 includes: electrodes 121, 127 formed on a back plane 110; insulator layers 141, 142, 143 formed on peripheries of respective electrodes so as to insulate the electrodes 121, 127; a magnetization fixing layer 122 formed on the electrode 121; a magnetization fixing layer 126 formed on the electrode 127; an intermediate layer 123 formed on the magnetization fixing layer 122; an intermediate layer 125 formed on the magnetization fixing layer 126; and an optical modulation layer 124 formed on the intermediate layers 123, 125. A magnetization direction of the magnetization fixing layer 122 and a magnetization direction of the magnetization fixing layer 126 are antiparallel each other, light made incident on the optical modulation layer 124 is modulated by a magnetoresistance effect and a field application electrode 150 is formed oppositely to the optical modulation layer 124 through the insulator layer 143.</p> |
