MAGNETIC MEMORY CELLS AND METHODS OF FORMATION

摘要

Memory cells including cell cores having free regions are disclosed. The free regions exhibit a strain that affects a magnetization orientation within the cell core. A stressor structure may exert a stress upon at least a portion of the cell core to effect the strain state of the free region. Also disclosed are semiconductor device structures and systems including such memory cells as well as methods for forming such memory cells.

主权项

1. A magnetic memory cell, comprising:
a cell core comprising:
a free region exhibiting a vertical magnetic orientation;a pinned region exhibiting a vertical magnetic orientation; anda nonmagnetic region between the free region and the pinned region; a stressor structure laterally about at least a portion of the cell core, the stressor structure applying a stress to at least the portion of the cell core to effect a strain exhibited by the free region, the strain effecting the vertical magnetic orientation exhibited by the free region, the stressor structure defining a substantially uniform lateral dimension along a height of the stressor structure; a conductive material above the cell core and the stressor structure; and another conductive material beneath the cell core and the stressor structure.