LED SEMICONDUCTOR COMPONENT

摘要

An LED semiconductor component having an n-doped substrate layer and a first, n-doped cladding layer, wherein the cladding layer is located on the substrate layer, and having an active layer, wherein the active layer comprises a light-emitting layer and is located on the first cladding layer, and having a second, p-doped cladding layer, wherein the second cladding layer is located on the active layer, and having a p-doped current spreading layer, wherein the current spreading layer is located on the second cladding layer, and having a p-doped contact layer, wherein the p-doped contact layer is located on the current spreading layer, wherein the p-doped contact layer is made of an aluminiferous layer and has carbon as dopant.

主权项

1. An LED semiconductor component comprising:
an n-doped substrate layer; a first n-doped cladding layer located on the substrate layer; an active layer comprising a light-emitting layer and being located on the first cladding layer; a second p-doped cladding layer located on the active layer; a p-doped current spreading layer located on the second cladding layer; and a p-doped contact layer located on the current spreading layer, the p-doped contact layer being made of an aluminiferous layer and has carbon as a dopant, wherein a concentration of aluminum is higher in the contact layer than in the current spreading layer, and wherein the first and second cladding layers and current spreading layer located on the substrate layer each include an AlGaAs compound.