SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE SIGE/SI FIN STRUCTURE

摘要

A semiconductor device includes a semiconductor-on-insulator substrate having an insulator layer, and at least one silicon germanium (SiGe) fin having a superlattice structure. The SiGe fin is formed on an upper surface of the insulator layer. A gate stack is formed on an upper surface of the at least one silicon germanium fin. The gate stack includes first and second opposing spacers defining a gate length therebetween. First and second epitaxial source/drain structures are formed on the insulator layer. The first and second epitaxial source/drain structures extend beneath the spacer to define a silicon germanium gate channel beneath the gate stack.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a semiconductor fin on an insulator layer of a semiconductor-on-insulator (SOI) substrate and forming a gate stack on the semiconductor fin; etching the SOI substrate to expose an insulator layer defining at least source/drain region and to expose sidewalls of the semiconductor fin; growing a silicon germanium (SiGe) layer on the etched sidewalls of the fin; and annealing the semiconductor device to diffuse SiGe ions of the SiGe layer into the fin such that a SiGe fin having a superlattice structure is formed beneath the gate stack.