| 发明名称 |
Super Junction Semiconductor Device having a Compensation Structure |
| 摘要 |
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a lateral direction parallel to a first surface of the semiconductor portion, and a compensation structure covering at least sidewalls of the mesa regions. The compensation structure includes at least two first compensation layers of a first conductivity type, at least two second compensation layers of a complementary second conductivity type, and at least one interdiffusion layer between one of the first and one of the second compensation layers. |
| 申请公布号 |
US2015214348(A1) |
申请公布日期 |
2015.07.30 |
| 申请号 |
US201514679483 |
申请日期 |
2015.04.06 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Gamerith Stefan;Willmeroth Armin;Hirler Franz |
| 分类号 |
H01L29/739;H01L29/06;H01L29/78;H01L29/10 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A super junction semiconductor device, comprising:
a semiconductor portion comprising mesa regions protruding from a base section and spatially separated in a lateral direction parallel to a first surface of the semiconductor portion; and a compensation structure covering at least sidewalls of the mesa regions, the compensation structure comprising at least two first compensation layers of a first conductivity type, at least two second compensation layers of a complementary second conductivity type, and at least one interdiffusion layer between one of the first and one of the second compensation layers. |
| 地址 |
Villach AT |
