METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to improve a performance of a semiconductor device, The present invention provides a method for manufacturing a semiconductor device comprising: forming a groove part (TP); forming an insulating film (F1) containing a silicon oxide film by a CVD method using gas containing O_3 gas and TEOS gas; coating the lateral surface of the groove part (TP) by the insulating film (F1); forming an insulating film (IF2) containing a silicon oxide film by a PECVD method; coating the lateral surface of the groove part (TP) by the insulating film (IF2) as an insulating film (IF1) is interposed; forming an insulating film (IF3) containing a silicon oxide film by a CVD method using gas containing O_3 gas and TEOS gas; and closing the groove part (TP) while leaving a space (SP) within the groove part (TP) by the insulating film (IF3).