TEMPERATURE CONTROL APPARATUS FOR HEAT TREATING SEMICONDUCTOR SUBSTRATE BASED ON HIGH PRESSURE GAS

摘要

The present invention relates to a temperature control apparatus to control a temperature for performing thermal processing of a semiconductor substrate based on high pressure gas. The temperature control apparatus comprises: a main body including an external chamber (11) and an internal chamber (12); a temperature control means (20) having a plurality of heaters to maintain the set temperature inside the main body; a gas control means (30) to supply processing gas and nitrogen gas at set pressure inside the main body; and a control means (40) to convert a process parameter of the temperature control means (20) by corresponding to a gas property of the gas control means (30). Thus, the temperature control apparatus is to maintain an optimal set processing condition in order to prevent overshoot and undershoot corresponding to a kind of the processing gas in a process to perform the thermal processing of a wafer in high pressure hydrogen gas atmosphere.