| 摘要 |
A method of making a semiconductor device comprises: providing a semiconductor wafer having a semiconductor layer 210; forming a first mask layer 220 over the semiconductor layer 210; forming a first metal layer 225 over the first mask layer 220; forming a second metal layer 230 over the first metal layer 225, the first metal layer 225 having a lower melting point than the second metal layer 230; annealing the second metal layer 230 to form islands; and etching through the first mask layer 220 and the semiconductor layer 210 using the islands as a mask to form an array of pillars 260. Where the islands may be removed after forming the pillars 260. A semiconductor material 270 may then be grown by epitaxial lateral over-growth (ELOG) from the sidewalls of the pillars 260, around the remaining first mask caps 221 such that any lateral strain in the pillar material 260 due to lattice mismatch with the support substrate 205 is not transferred into the semiconductor material 270 grown on the sides of the pillars 260. |
