发明名称 不揮発性半導体記憶装置及びその製造方法とデータ書き換え方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a highly reliable EEPROM which can make data-hold time be infinite similar to a mask ROM and hold data over a long period of time. <P>SOLUTION: A nonvolatile semiconductor storage device comprises: a first nonvolatile semiconductor storage element 100 having a thermal equilibrium state threshold voltage which is positive with respect to a predetermined sense level, for storing positive data; and a second nonvolatile semiconductor storage element 200 having a thermal equilibrium state threshold voltage which is negative with respect to the predetermined sense level, for storing negative data. Accordingly, data-hold time is made to be infinite. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5755096(B2) 申请公布日期 2015.07.29
申请号 JP20110213870 申请日期 2011.09.29
申请人 发明人
分类号 H01L21/8247;G11C16/04;H01L21/336;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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