发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
摘要 |
<p>Provided is a semiconductor device manufacturing method, comprising forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and has a higher solid solubility for impurities included in the first semiconductor layer than the first semiconductor layer; annealing the first sacrificial layer and the first semiconductor layer; removing the first sacrificial layer through a wet process; after removing the first sacrificial layer, performing at least one of forming an insulating layer that covers at least a portion of the first semiconductor layer and etching a portion of the first semiconductor layer; and forming an electrode layer that is electrically connected to the first semiconductor layer.</p> |
申请公布号 |
EP2662886(A4) |
申请公布日期 |
2015.07.29 |
申请号 |
EP20120739200 |
申请日期 |
2012.01.23 |
申请人 |
FURUKAWA ELECTRIC CO., LTD.;NATIONAL UNIVERSITY CORPORATION TOHOKU UNVERSITY |
发明人 |
KAMBAYASHI, HIROSHI;TERAMOTO, AKINOBU;OHMI, TADAHIRO |
分类号 |
H01L29/778;H01L21/306;H01L21/336;H01L21/338;H01L29/20;H01L29/423;H01L29/51 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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