发明名称 半導体装置
摘要 The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).
申请公布号 JP5757314(B2) 申请公布日期 2015.07.29
申请号 JP20130218272 申请日期 2013.10.21
申请人 富士電機株式会社 发明人 池田 良成;征矢野 伸;両角 朗;鈴木 健司;高橋 良和
分类号 H01L23/48;H01L23/12;H01L23/29;H01L25/07;H01L25/18 主分类号 H01L23/48
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