| 摘要 |
<p>A semiconductor apparatus having a bootstrap-type driver circuit includes a cavity for a SON structure formed below a bootstrap diode Db, and a p-type floating region formed in a n−epitaxial layer between a bootstrap diode Db and a p-type GND region at the ground potential (GND). The p-type floating region extends to the cavity for suppressing the leakage current caused by the holes flowing to the p−substrate in charging an externally attached bootstrap capacitor C1. The semiconductor apparatus which includes a bootstrap-type driver circuit facilitates suppressing the leakage current caused by the holes flowing to the p−substrate, when the bootstrap diode is biased in forward.</p> |
