发明名称 |
A METHOD OF MAKING A SPLIT GATE NON-VOLATILE FLOATING GATE MEMORY CELL HAVING A SEPARATE ERASE GATE, AND A MEMORY CELL MADE THEREBY |
摘要 |
A non-volatile memory cell has a single crystalline substrate of a first conductivity type with a top surface. A first region of a second conductivity type is in the substrate along the top surface. A second region of the second conductivity type is in the substrate along the top surface, spaced apart from the first region. A channel region is the first region and the second region. A word line gate is positioned over a first portion of the channel region, immediately adjacent to the first region. The word line gate is spaced apart from the channel region by a first insulating layer. A floating gate is positioned over another portion of the channel region. The floating gate has a lower surface separated from the channel region by a second insulating layer, and an upper surface opposite the lower surface. The floating gate has a first side wall adjacent to but separated from the word line gate; and a second side wall opposite the first side wall. The second side wall and the upper surface form a sharp edge, with the second side wall greater in length than the first side wall. The upper surface slopes upward from the first side wall to the second side wall. A coupling gate is positioned over the upper surface of the floating gate and is insulated therefrom by a third insulating layer. An erase gate is positioned adjacent to the second side wall of the floating gate. The erase gate is positioned over the second region and insulated therefrom. |
申请公布号 |
EP2748842(A4) |
申请公布日期 |
2015.07.29 |
申请号 |
EP20120826205 |
申请日期 |
2012.08.08 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
WANG, CHUNMING;QIAO, BAOWEI;ZHANG, ZUFA;ZHANG, YI;WANG, SHIUH, LUEN;LU, WEN-JUEI |
分类号 |
H01L21/4763;H01L21/28;H01L27/115;H01L29/423;H01L29/66;H01L29/788 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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