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发明名称
Verfahren zur Herstellung einer Kontaktschicht auf der Halbleiterschicht von Kupferoxydultrockengleichrichtern
摘要
申请公布号
DE725287(C)
申请公布日期
1942.09.18
申请号
DE1939S136055D
申请日期
1939.02.26
申请人
SIEMENS-SCHUCKERTWERKE AG.
发明人
SIEBERT DIPL.-ING. ERNST
分类号
H01L21/16
主分类号
H01L21/16
代理机构
代理人
主权项
地址
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