| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile resistance change element that allows reducing degradation and variation of device characteristics and has a rectifying function.SOLUTION: A non-volatile resistance change element 20 includes: a first wiring layer; a second wiring layer disposed so as to cross the first wiring layer; a first electrode 1 disposed between the first wiring layer and the second wiring layer at a crossing portion where the first wiring layer and the second wiring layer are crossed, and containing a metal element; a second electrode 2 disposed between the first electrode 1 and the second wiring layer, and containing an n-type semiconductor; a resistance change layer 3 disposed between the first electrode 1 and the second electrode 2, and having a conductor portion (filament) 3a composed of the metal element contained in the first electrode 1; and a first layer (diffusion prevention layer) 4 disposed between the resistance change layer 3 and the second electrode 2, and preventing intrusion of the conductor portion 3a. The conductor portion 3a included in the resistance change layer 3 is spaced apart from the second electrode 2, the first layer 4 is made from an insulating material, and the resistance change layer 3 and the second electrode 2 are separated by the first layer 4.</p> |
