METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method for manufacturing a semiconductor device to prevent a false report about an external test of a semiconductor device by controlling the change of a surface condition of a gold-plating electrode. The method of manufacturing the semiconductor device forms a gold-plating electrode consisting of multiple gold-plating layers which are accumulated by alternately repeating a step of performing a crystal growth of a plating layer by applying electricity between an anode and a cathode included in a processing cup of a plating device when a gold-plating electrode is formed (current carrying on) and a step of performing a crystal growth of the plating layer without applying the electricity between the anode and the cathode (current carrying off). Accordingly, the method of manufacturing the semiconductor device may maintain the surface condition for roughness as 0.025 rad degrees by controlling change of a surface condition of the gold-plating electrode even if the component of a plating solution is changed. As a result, the method can reduce a false report about an external test of a semiconductor device due to change of the brightness of the gold-plating electrode in the external test of the gold-plating electrode.