Light emitting diode and fabrication method thereof

摘要

Disclosed is a method of fabricating a light emitting diode (100) comprising the steps of: forming a compound semiconductor layer (145) on a substrate (110), the substrate including a chip region and an isolation region; selectively etching the compound semiconductor layer to form a light emitting structure (120) on the chip region and form a buffer structure (180) on the isolation region; forming a conductive support member (160) on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into a plurality of chip regions, wherein the buffer structure (180) is spaced apart from the light emitting structure (120).