发明名称 炭化珪素半導体装置およびその製造方法
摘要 <p>First, third, and fourth regions have a first conductivity type, and a second region has a second conductivity type. The second region is provided with a plurality of through holes exposing the first region. The third region includes a contact portion, a connecting portion, and a filling portion. The contact portion is in contact with a first portion of the second region. The connecting portion extends from the contact portion to each of the plurality of through holes in the second region. The filling portion fills each of the plurality of through holes in the second region. The fourth region, is provided on the first portion of the second region.</p>
申请公布号 JP5757223(B2) 申请公布日期 2015.07.29
申请号 JP20110264332 申请日期 2011.12.02
申请人 发明人
分类号 H01L29/12;H01L21/336;H01L21/337;H01L21/338;H01L27/088;H01L29/78;H01L29/808;H01L29/812 主分类号 H01L29/12
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