Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof

摘要

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate (1610, 2010, 2110, 2510, 2710) having a first conductivity type, an isolation structure (including a sinker region (1622, 2022, 2122, 2522, 2722) and a buried layer (1620, 2020, 2120, 2520, 2720)), an active device (1600, 1700, 1800, 1900, 2000, 2100, 2200, 2300, 2400, 2500, 2600, 2700, 2800) within area (1630, 2030, 2130, 2530, 2730) of the substrate contained by the isolation structure, and a diode circuit (1562, 1563, 1646, 1746, 1846, 1946, 2046, 2146, 2246, 2346, 2446, 2545, 2546, 2645, 2646, 2745, 2746, 2747, 2845, 2846, 2847). The buried layer is positioned below the top substrate surface (1612, 2012, 2112, 2512, 2712), and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region (1634, 2034, 2134, 2534, 2734) of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes (1746, 1846, 1946, 2645, 2845) and/or PN junction diodes (2246, 2346, 2446, 2646, 2847). In further embodiments, the diode circuit may include one or more resistive networks (1810, 1910, 2310, 2410) in series and/or parallel with the Schottky and/or PN diode(s).