Implantation processing step for a recess in finFET

摘要

An implantation processing step includes the following steps for a recess in a FinFET. At least a fin structure is formed on a substrate. A gate is formed across the fin structure. A recess is formed in the fin structure beside the gate. An angle anti-punch through implant is performed to form an embedded layer in the fin structure right below the gate. An angle barrier implant is performed to form a barrier liner in the fin structure surrounding the recess. A junction implant is performed to form a junction doped region in the fin structure below the recess.

主权项

1. An implantation processing step for a recess in FinFET, comprising:
forming at least a fin structure on a substrate; forming a gate across the fin structure; forming a recess in the fin structure beside the gate; performing an angle anti-punch through implant to form an embedded layer in the fin structure right below the gate; performing an angle barrier implant to form a barrier liner in the fin structure surrounding the recess; and performing a junction implant to form a junction doped region in the fin structure below the recess.