Method for forming patterns of semiconductor device using SADP process

摘要

To fabricate patterns of a semiconductor device, a mask film is formed on a substrate. A plurality of first patterns and a plurality of second patterns are formed on the mask film. The plurality of first patterns is spaced apart from each other at a first distance. The plurality of second patterns is spaced apart from each other at a second distance. The second distance is different from the first distance. A spacer film is conformally formed on the plurality of first patterns and the plurality of second patterns to a predetermined thickness. The spacer film fills spaces between the plurality of second patterns. A part of the spacer film is partially removed to form a plurality of spacer film patterns are formed on side walls of the plurality of the first patterns. The plurality of first patterns and the plurality of second patterns are removed. A plurality of patterns is formed on the substrate using the plurality of spacer film as a mask.

主权项

1. A method for forming patterns of a semiconductor device, comprising:
forming a mask film on a substrate; forming a plurality of first patterns and a plurality of second patterns on the mask film, wherein the plurality of first patterns is substantially equally spaced apart from each other at a first distance, and the plurality of second patterns is substantial equally spaced apart from each other at a second distance different from the first distance; conformally forming a spacer film on the plurality of first patterns and the plurality of second patterns to a predetermined thickness, wherein the spacer film completely fills spaces between two adjacent second patterns of the plurality of second patterns and the spacer film partially fills spaces between the plurality of first patterns; removing a part of the spacer film, thereby forming a plurality of spacer film patterns on side walls of the plurality of first patterns; removing the plurality of first patterns and the plurality of second patterns; and forming a plurality of patterns on the substrate by etching the mask film using the plurality of spacer film patterns as a mask.