Three-dimensional resistive random access memory devices, methods of operating the same, and methods of fabricating the same

摘要

A semiconductor device includes a substrate extending in a horizontal direction. An active pillar is present on the substrate extending in a vertical direction relative to the horizontal direction of extension of the substrate. A variable resistive pattern is present on the substrate extending in the vertical direction along the active pillar, an electrical resistance of the variable resistive pattern being variable in response to an oxidation or reduction thereof. A gate is present at a sidewall of the active pillar.

主权项

1. A semiconductor device comprising:
a substrate extending in a horizontal direction: an active pillar on the substrate extending in a vertical direction relative to the horizontal direction of extension of the substrate; a variable resistive pattern on the substrate extending in the vertical direction along the active pillar, an electrical resistance of the variable resistive pattern being variable in response to an oxidation or reduction thereof; and a gate at a sidewall of the active pillar; wherein the variable resistive pattern is a cup-shaped structure including sidewalls and a base.