Semiconductor light emitting element

摘要

A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.

主权项

1. A semiconductor light emitting element comprising:
a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate, wherein the semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer, wherein the semiconductor light emitting element further comprises a continuous junction layer located between the conductive support substrate and the at least two semiconductor regions, at least a portion of the continuous junction layer being in direct contact with the semiconductor laminate of each semiconductor region, and wherein the semiconductor light emitting element further comprises a reflection layer at a bottom of the trench.