Sensing memory cells

摘要

The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying a ramping voltage to a control gate of a memory cell and to an analog-to-digital converter (ADC). The aforementioned embodiment of a method also includes detecting an output of the ADC at least partially in response to when the ramping voltage causes the memory cell to trip sense circuitry.

主权项

1. A method for operating a memory cell, comprising:
detecting an output of an analog-to-digital converter (ADC) at least partially in response to a ramping signal causing a selected memory cell to conduct; comparing the detected output of the ADC to data in a data latch associated with the selected memory cell; and inhibiting the selected memory cell from further programming at least partially in response to a result of the comparison indicating that the selected memory cell has been programmed to a desired state.