Dynamic programming of advanced nanometer flash memory

摘要

An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.

主权项

1. A programming circuit for use in a memory device, comprising:
a first bit line coupled to an array of memory cells and to a first switch and second switch, and a second bit line coupled to the array of memory cells and to a third switch and a fourth switch, wherein the first switch and third switch are coupled to a first current mirror and the second switch and fourth switch are coupled to a second current mirror; and a controller configured to turn on the first switch and fourth switch during a first time interval and to turn on the second switch and third switch during a second time interval, wherein values are programmed into at least some of the memory cells using the first bit line and the second bit line during a third time interval that spans the first time interval and the second time interval.