Stack including a magnetic zero layer

摘要

A stack including a crystallographic orientation interlayer, a magnetic zero layer disposed on the interlayer, and a magnetic recording layer disposed on the magnetic zero layer is disclosed. The magnetic zero layer is non-magnetic or has a saturation magnetic flux density (Bs) less than about 100 emu/cc. The magnetic zero layer and the magnetic layer include grains surrounded by a non-magnetic segregant. The magnetic zero layer provides a coherent interface between the interlayer and the magnetic layer with a lattice mismatch less than about 4%.

主权项

1. A stack, comprising:
a crystallographic orientation interlayer; a magnetic zero layer disposed on the interlayer, the magnetic zero layer being non-magnetic and comprising non-magnetic grains separated by a non-magnetic segregant; and a magnetic recording layer disposed on the magnetic zero layer, the magnetic recording layer comprising ferromagnetic grains separated by a non-magnetic segregant, wherein the magnetic zero layer comprises the same elements as the magnetic recording layer, a percentage by volume of the non-magnetic segregant of the magnetic zero layer is greater than a percentage by volume of the non-magnetic segregant of the magnetic recording layer, a lattice mismatch between the interlayer and the magnetic recording layer is less than about 4%, and a thickness of the magnetic zero layer is less than about 10 Å.