| 主权项 |
1. A method of forming tight-pitched patterns, comprising:
providing a target pattern, wherein the target pattern comprises a plurality of first stripe patterns, and each of the first stripe patterns has a first width and a first length; providing a photomask comprising a plurality of second stripe patterns corresponding to the first stripe patterns, and each of the second stripe patterns has a second width and a second length; performing a first exposure process with the photomask in an exposure system, wherein the first exposure process uses a first light source with a higher resolution that is capable of resolving the second width of each of the second stripe patterns, wherein the first light source is a dipole illumination light; and after performing the first exposure process, performing a second exposure process with the same photomask in the exposure system, wherein the second exposure process uses a second light source with a lower resolution that is not adequate to resolve the second width of each of the second stripe patterns. |
