| 发明名称 | Thermal shunt | ||
| 摘要 | A thermal shunt is to transfer heat from a sidewall of a device to a silicon substrate. The device is associated with a Silicon-On-Insulator (SOI) including a buried oxide layer. The thermal shunt extends through the buried oxide layer to the silicon substrate. | ||
| 申请公布号 | US9093428(B2) | 申请公布日期 | 2015.07.28 |
| 申请号 | US201114342174 | 申请日期 | 2011.08.31 |
| 申请人 | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 发明人 | Liang Di |
| 分类号 | H01L21/00;H01L21/477;H01L27/12;H01S5/024;H01S5/10;H01L29/02;H01S5/02 | 主分类号 | H01L21/00 |
| 代理机构 | Hewlett-Packard Patent Department | 代理人 | Hewlett-Packard Patent Department |
| 主权项 | 1. A Silicon-On-Insulator (SOI) device, comprising: a sidewall disposed on a silicon device layer of the SOI, wherein the SOI includes a buried oxide layer sandwiched between the silicon device layer and a silicon substrate; and a thermal shunt to contact the sidewall of the device and extend through the silicon device layer and buried oxide layer to the silicon substrate to transfer heat from the sidewall of the device to the silicon substrate, wherein the thermal shunt is electrically insulating. | ||
| 地址 | Houston TX US | ||