VTFT formation using capillary action

摘要

Producing a vertical transistor includes providing a conductive gate structure having a reentrant profile on a substrate. A conformal dielectric material layer is formed on the conductive gate structure. A conformal semiconductor material layer is formed on the dielectric material layer, over the conductive gate structure. An electrode is formed located over the conductive gate structure and in contact with a first portion of the semiconductor layer and another electrode is formed vertically separated from the electrode and located in contact with a second portion of the semiconductor layer by printing an inhibitor that wicks along the reentrant profile of the conductive gate structure and depositing a conductive inorganic thin film using an atomic layer deposition process where the inhibitor is absent to form a channel in the semiconductor layer along the reentrant profile between the electrodes by inhibiting deposition of conductive material between the electrodes with the wicked inhibitor.

主权项

1. A method of producing a vertical transistor comprising:
providing a conductive gate structure having a reentrant profile on a substrate; forming a conformal dielectric material layer on the conductive gate structure; forming a conformal semiconductor material layer on the dielectric material layer, over the conductive gate structure; forming a first electrode located over the conductive gate structure and in contact with a first portion of the semiconductor layer, and forming a second electrode vertically separated from the first electrode and located in contact with a second portion of the semiconductor layer, including:
printing an inhibitor that wicks from a capillary action along the reentrant profile of the conductive gate structure; anddepositing a conductive inorganic thin film using an atomic layer deposition process where the inhibitor is absent to form the first and second electrodes, thereby defining a channel in the semiconductor layer in the reentrant profile between the first and second electrodes.