发明名称 |
Plasma processing apparatus and plasma processing method |
摘要 |
A plasma processing apparatus can excite uniform plasma on a large substrate. The plasma processing apparatus 10 includes a vacuum chamber 100 having therein a mounting table 115 configured to mount a substrate G, and a plasma space, formed above the mounting table, in which plasma is generated; a first coaxial waveguide 225 through which a high frequency power for exciting plasma is supplied into the vacuum chamber 100; a waveguide path 205, connected to the first coaxial waveguide 225, having a slit-shaped opening toward the plasma space; and an adjusting unit configured to adjust a wavelength of the high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening. By adjusting the wavelength of the high frequency power propagating in the waveguide path to be sufficiently lengthened, uniform plasma can be excited on the large substrate. |
申请公布号 |
US9095039(B2) |
申请公布日期 |
2015.07.28 |
申请号 |
US201113809990 |
申请日期 |
2011.07.14 |
申请人 |
TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED |
发明人 |
Hirayama Masaki;Ohmi Tadahiro |
分类号 |
H01J7/46;H05H1/46;H01J37/32 |
主分类号 |
H01J7/46 |
代理机构 |
Pearne & Gordon LLP |
代理人 |
Pearne & Gordon LLP |
主权项 |
1. A plasma processing apparatus comprising:
a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon; and a plasma space in which plasma is generated, the plasma space being formed above the mounting table; a transmission path comprising a first coaxial waveguide through which a high frequency power for exciting plasma is supplied into the decompression chamber; a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space; a matching device which is connected to a high frequency power supply; an adjusting unit configured to adjust an effective height of the waveguide path and adjust wavelength of a high frequency power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening; a reflectometer connected to the first coaxial waveguide and configured to measure a reflection or an impedance of a high frequency power propagating in the first coaxial waveguide; and a controller configured to adjust a wavelength of the high frequency power propagating in the waveguide path in the lengthwise direction of the slit-shaped opening based on the reflection or the impedance measured by the reflectometer, wherein both ends of the waveguide path in the lengthwise direction of the slit-shaped opening are not short-circuited. |
地址 |
Sendai-Shi JP |